JPH0355038B2 - - Google Patents
Info
- Publication number
- JPH0355038B2 JPH0355038B2 JP60029052A JP2905285A JPH0355038B2 JP H0355038 B2 JPH0355038 B2 JP H0355038B2 JP 60029052 A JP60029052 A JP 60029052A JP 2905285 A JP2905285 A JP 2905285A JP H0355038 B2 JPH0355038 B2 JP H0355038B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- light emitting
- layer
- light
- emitting layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 claims description 69
- 229910007991 Si-N Inorganic materials 0.000 claims description 29
- 229910006294 Si—N Inorganic materials 0.000 claims description 29
- 239000010409 thin film Substances 0.000 claims description 24
- 239000007789 gas Substances 0.000 claims description 23
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 17
- 239000002994 raw material Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 230000005684 electric field Effects 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 51
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000005401 electroluminescence Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910006360 Si—O—N Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60029052A JPS61188891A (ja) | 1985-02-15 | 1985-02-15 | 薄膜発光素子の製造方法 |
| US07/023,912 US4721631A (en) | 1985-02-14 | 1987-03-09 | Method of manufacturing thin-film electroluminescent display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60029052A JPS61188891A (ja) | 1985-02-15 | 1985-02-15 | 薄膜発光素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61188891A JPS61188891A (ja) | 1986-08-22 |
| JPH0355038B2 true JPH0355038B2 (en]) | 1991-08-22 |
Family
ID=12265605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60029052A Granted JPS61188891A (ja) | 1985-02-14 | 1985-02-15 | 薄膜発光素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61188891A (en]) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS622495A (ja) * | 1985-06-26 | 1987-01-08 | ホ−ヤ株式会社 | 薄膜ｅｌ素子の製造方法 |
| US5264714A (en) * | 1989-06-23 | 1993-11-23 | Sharp Kabushiki Kaisha | Thin-film electroluminescence device |
-
1985
- 1985-02-15 JP JP60029052A patent/JPS61188891A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61188891A (ja) | 1986-08-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |